BYG10D thru byg10m 200v-1000v 1.5a web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics controlled avalanche characteristics glass passivated junction low reverse current high surge current capability wave and reflow solderable silicon mesa smd rectifier absolute maximum ratings parameter test conditions type symbol value unit reverse voltage BYG10D v r =v rrm 200 v g =repetitive peak reverse voltage byg10g v r =v rrm 400 v byg10j v r =v rrm 600 v byg10k v r =v rrm 800 v byg10m v r =v rrm 1000 v peak forward surge current t p =10ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j =t stg 55...+150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r =1a, t j =25 c e r 20 mj maximum thermal resistance parameter test conditions symbol value unit junction lead t l =const. r thjl 25 k/w junction ambient mounted on epoxyglass hard tissue r thja 150 k/w mounted on epoxyglass hard tissue, 50mm 2 35 m cu r thja 125 k/w mounted on aloxidceramic (al 2 o 3 ), 50mm 2 35 m cu r thja 100 k/w electrical characteristics parameter test conditions type symbol min typ max unit forward voltage i f =1a v f 1.1 v g i f =1.5a v f 1.15 v reverse current v r =v rrm i r 1 a v r =v rrm , t j =100 c i r 10 a reverse recovery time i f =0.5a, i r =1a, i r =0.25a t rr 4 s
ratings and characteristic curves BYG10D thru byg10m figure 5. thermal response e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 BYG10D thru byg10m 200v-1000v 1.5a silicon mesa smd rectifier 0 40 80 120 160 0.01 0.1 1 10 100 i reverse current ( a ) r t j junction temperature ( c ) 200 94 9180 v r =v rrm figure 1. typ. reverse current vs. junction temperature 0 0 0.4 0.8 1.2 1.6 2.0 i average forward current ( a ) fav t amb ambient temperature ( c ) 94 9179 40 80 120 160 200 125k/w 100k/w 150k/w r thja =25k/w figure 2. max. average forward current vs. ambient temperature 0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 100 i forward current ( a ) f v f forward voltage ( v ) 3.0 94 9284 t j =25 c t j =75 c t j = 125 c figure 3. typ. forward current vs. forward voltage 0 0 1000 2000 3000 4000 5000 94 9544 0.2 0.4 0.6 0.8 t reverse recovery time ( ns ) rr i f forward current ( a ) 1.0 t amb = 100 c t amb = 125 c t amb =50 c i r =0.5a, i r =0.125a t amb =25 c t amb =75 c figure 4. typ. reverse recovery time vs. forward current 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( s ) 94 9339 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse 125k/w dc
|
